Evidence of ultra-low-k dielectric material degradation and nanostructure alteration of the Cu/ultra-low-k interconnects in time-dependent dielectric breakdown failure
Ultra-low-k time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development due to its weaker intrinsic breakdown strength compared to SiO2 dielectrics. With continuous technology scaling, this problem is further exacerbated for Cu/ult...
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Main Authors: | Lam, Jeffrey C. K., Huang, Maggie Y. M., Ng, Tsu Hau, Mohammed Khalid Dawood, Zhang, Fan, Du, Anyan, Sun, Handong, Shen, Zexiang, Mai, Zhihong |
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Other Authors: | School of Physical and Mathematical Sciences |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96542 http://hdl.handle.net/10220/9881 |
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Institution: | Nanyang Technological University |
Language: | English |
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