Current crowding effect on copper dual damascene via bottom failure for ULSI applications

Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux div...

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Bibliographic Details
Main Authors: Vairagar, A. V., Tan, Cher Ming, Arijit, Roy, Krishnamoorthy, Ahila, Mhaisalkar, Subodh Gautam
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/100916
http://hdl.handle.net/10220/4644
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Institution: Nanyang Technological University
Language: English