Current crowding effect on copper dual damascene via bottom failure for ULSI applications
Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux div...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2009
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100916 http://hdl.handle.net/10220/4644 |
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Institution: | Nanyang Technological University |
Language: | English |