Current crowding effect on copper dual damascene via bottom failure for ULSI applications

Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux div...

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Main Authors:	Vairagar, A. V., Tan, Cher Ming, Arijit, Roy, Krishnamoorthy, Ahila, Mhaisalkar, Subodh Gautam
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering
Online Access:	https://hdl.handle.net/10356/100916 http://hdl.handle.net/10220/4644
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1009162020-03-07T14:00:32Z Current crowding effect on copper dual damascene via bottom failure for ULSI applications Vairagar, A. V. Tan, Cher Ming Arijit, Roy Krishnamoorthy, Ahila Mhaisalkar, Subodh Gautam School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux divergence based finite element analyses is performed and stress-migration is found to be important in the failure rate behavior observed. Semi-classical width dependence Black’s equation together with the finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the interface between the line and via for the wide line/via structure, and good agreement is obtained between the simulation and experimental results. Published version 2009-06-22T07:56:45Z 2019-12-06T20:30:38Z 2009-06-22T07:56:45Z 2019-12-06T20:30:38Z 2005 2005 Journal Article Tan, C. M., Arijit, R., Vairagar, A. V., Krishnamoorthy, A., & Mhaisalkar, S. G. (2005). Current crowding effect on copper dual damascene via bottom failure for ULSI applications. IEEE Transactions on Device and Materials Reliability, 5(2), 198-205. 1530-4388 https://hdl.handle.net/10356/100916 http://hdl.handle.net/10220/4644 10.1109/TDMR.2005.846830 en IEEE transactions on device and materials reliability © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 8 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering Vairagar, A. V. Tan, Cher Ming Arijit, Roy Krishnamoorthy, Ahila Mhaisalkar, Subodh Gautam Current crowding effect on copper dual damascene via bottom failure for ULSI applications
description	Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux divergence based finite element analyses is performed and stress-migration is found to be important in the failure rate behavior observed. Semi-classical width dependence Black’s equation together with the finite element analysis revealed that the difference in the time to failure is due to the much larger average current density along the interface between the line and via for the wide line/via structure, and good agreement is obtained between the simulation and experimental results.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Vairagar, A. V. Tan, Cher Ming Arijit, Roy Krishnamoorthy, Ahila Mhaisalkar, Subodh Gautam
format	Article
author	Vairagar, A. V. Tan, Cher Ming Arijit, Roy Krishnamoorthy, Ahila Mhaisalkar, Subodh Gautam
author_sort	Vairagar, A. V.
title	Current crowding effect on copper dual damascene via bottom failure for ULSI applications
title_short	Current crowding effect on copper dual damascene via bottom failure for ULSI applications
title_full	Current crowding effect on copper dual damascene via bottom failure for ULSI applications
title_fullStr	Current crowding effect on copper dual damascene via bottom failure for ULSI applications
title_full_unstemmed	Current crowding effect on copper dual damascene via bottom failure for ULSI applications
title_sort	current crowding effect on copper dual damascene via bottom failure for ulsi applications
publishDate	2009
url	https://hdl.handle.net/10356/100916 http://hdl.handle.net/10220/4644
_version_	1681036629303623680

Current crowding effect on copper dual damascene via bottom failure for ULSI applications

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