Current crowding effect on copper dual damascene via bottom failure for ULSI applications

• Main Authors: Vairagar, A. V., Tan, Cher Ming, Arijit, Roy, Krishnamoorthy, Ahila, Mhaisalkar, Subodh Gautam
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100916; http://hdl.handle.net/10220/4644
• Institution: Nanyang Technological University

Reliability of interconnect via is increasing an important issue in submicron technology. Electromigration experiments are performed on line/via structures in two level Cu dual damascene interconnection system and it is found that wide line/via fails earlier than the narrow line/via. Atomic flux div...