Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test

• Main Authors: Prasad, K., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Chen, Zhong, Zhang, Sam, Chen, Zhe
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/95351; http://hdl.handle.net/10220/8218
• Institution: Nanyang Technological University

Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials an...