Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test

Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test

Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As the sizes of transistors are scaled down to submicron regime, new materials an...

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書目詳細資料
Main Authors:	Prasad, K., Gan, Zhenghao, Mhaisalkar, Subodh Gautam, Chen, Zhong, Zhang, Sam, Chen, Zhe
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2012
主題:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	https://hdl.handle.net/10356/95351 http://hdl.handle.net/10220/8218
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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