Improved pentacene device characteristics with sol–gel SiO2 dielectric films

• Main Authors: Cahyadi, Tommy, Tan, H. S., Namdas, E. B., Mhaisalkar, Subodh Gautam, Lee, Pooi See, Chen, Z. K., Ng, C. M., Boey, Freddy Yin Chiang
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• 在線閱讀: https://hdl.handle.net/10356/97335; http://hdl.handle.net/10220/10486
• 機構: Nanyang Technological University

The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel SiO2 as inorganic capping layer to significantly improve device characterist...