Improved pentacene device characteristics with sol–gel SiO2 dielectric films
The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel SiO2 as inorganic capping layer to significantly improve device characterist...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97335 http://hdl.handle.net/10220/10486 |
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Institution: | Nanyang Technological University |
Language: | English |