Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors

• Main Authors: Cahyadi, Tommy, Tan, H. S., Mhaisalkar, Subodh Gautam, Lee, Pooi See, Boey, Freddy Yin Chiang, Chen, Z. K., Ng, C. M., Rao, V. R., Qi, Guojun
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/98488; http://hdl.handle.net/10220/8063
• Institution: Nanyang Technological University

The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition studies of the hysteresis behavior and capacitance-voltage characteristics on si...