Applications of finite element methods for reliability study of ULSI interconnections

• المؤلفون الرئيسيون: Tan, Cher Ming, Li, Wei, Gan, Zhenghao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97730; http://hdl.handle.net/10220/11155
• المؤسسة: Nanyang Technological University

Three main failure mechanisms of ULSI interconnects are the electromigration (EM), stress induced voiding (SIV) and low-k dielectric breakdown. Reliability tests for these mechanisms are too long to meet the development time requirement, and the underlying dominant mechanisms cannot be identified, r...