Realistic modeling of electromigration in today’s ULSI interconnections

IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or s...

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Main Author: Li, Wei
Other Authors: Tan Cher Ming
Format: Theses and Dissertations
Language:English
Published: 2009
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Online Access:https://hdl.handle.net/10356/18900
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-189002023-07-04T17:02:54Z Realistic modeling of electromigration in today’s ULSI interconnections Li, Wei Tan Cher Ming School of Electrical and Electronic Engineering Systems on Silicon Manufacturing Co. Pte Ltd DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or short) the electrical connections. The process of mass transportation is called Electromigration (EM). In contrast to a pure diffusion process due only to concentration gradients, the kinetic of EM in metal thin film is rather complicated and it is a mass transportation process controlled by various driving forces such as the electron wind, temperature gradients, stress gradients and the surface tension. Reliability evaluation and improvement of new interconnects require a more thorough understanding of the physics of EM, but experimental investigation can be too costly and too slow to cope with the changing interconnect systems. Physics-based modeling of the EM becomes necessary to complement the experimental investigation. In the first part of this dissertation, a comprehensive review on the EM models for the interconnections and their evolution over the last three decades is presented. The different EM models are categorized according to their respective simulation methodologies. The primary objective of the review is to re-examine the different EM simulation methodologies and provide a good reference starting point for researchers who are new in the field of EM modeling. DOCTOR OF PHILOSOPHY (EEE) 2009-08-12T03:33:29Z 2009-08-12T03:33:29Z 2008 2008 Thesis Li, W. (2008). Realistic modeling of electromigration in today’s ULSI interconnections. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/18900 10.32657/10356/18900 en 174 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Li, Wei
Realistic modeling of electromigration in today’s ULSI interconnections
description IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or short) the electrical connections. The process of mass transportation is called Electromigration (EM). In contrast to a pure diffusion process due only to concentration gradients, the kinetic of EM in metal thin film is rather complicated and it is a mass transportation process controlled by various driving forces such as the electron wind, temperature gradients, stress gradients and the surface tension. Reliability evaluation and improvement of new interconnects require a more thorough understanding of the physics of EM, but experimental investigation can be too costly and too slow to cope with the changing interconnect systems. Physics-based modeling of the EM becomes necessary to complement the experimental investigation. In the first part of this dissertation, a comprehensive review on the EM models for the interconnections and their evolution over the last three decades is presented. The different EM models are categorized according to their respective simulation methodologies. The primary objective of the review is to re-examine the different EM simulation methodologies and provide a good reference starting point for researchers who are new in the field of EM modeling.
author2 Tan Cher Ming
author_facet Tan Cher Ming
Li, Wei
format Theses and Dissertations
author Li, Wei
author_sort Li, Wei
title Realistic modeling of electromigration in today’s ULSI interconnections
title_short Realistic modeling of electromigration in today’s ULSI interconnections
title_full Realistic modeling of electromigration in today’s ULSI interconnections
title_fullStr Realistic modeling of electromigration in today’s ULSI interconnections
title_full_unstemmed Realistic modeling of electromigration in today’s ULSI interconnections
title_sort realistic modeling of electromigration in today’s ulsi interconnections
publishDate 2009
url https://hdl.handle.net/10356/18900
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