Realistic modeling of electromigration in today’s ULSI interconnections

IC architecture makes extensively use of multiple interconnect levels with many vias that enable electrical current to flow between each level. A common failure mechanism in interconnections is the formation and the growth of voids and/or hillocks which may span across the line width and sever (or s...

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Bibliographic Details
Main Author: Li, Wei
Other Authors: Tan Cher Ming
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/18900
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Institution: Nanyang Technological University
Language: English
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