Reliability modeling for ULSI interconnects
Electromigration (EM) and stress-induced voiding (SIV) are the two major reliability concerns for metal interconnects in integrated circuits. In particular, with the dimensions of interconnect scaled into nano regime and the inclusion of low-k materials as dielectrics, the reliability aspects for on...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/42101 |
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| Institution: | Nanyang Technological University |
| Language: | English |