Optimizing of TiN barrier properties for CNT interconnects

• المؤلف الرئيسي: Ng, Anthony Tian Shi
• مؤلفون آخرون: Tay Beng Kang
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/50111
• المؤسسة: Nanyang Technological University

This report aims to investigate the various parameters on optimizing of the Titanium Nitride (TiN) thin films to achieve low resistivity, fabrication of four point probe flip chip design and measurement of the flip chip interconnection resistance. Three controlled parameters are experimented in the...