Optimizing of TiN barrier properties for CNT interconnects
This report aims to investigate the various parameters on optimizing of the Titanium Nitride (TiN) thin films to achieve low resistivity, fabrication of four point probe flip chip design and measurement of the flip chip interconnection resistance. Three controlled parameters are experimented in the...
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格式: | Final Year Project |
語言: | English |
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2012
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在線閱讀: | http://hdl.handle.net/10356/50111 |
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機構: | Nanyang Technological University |
語言: | English |
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