A study of the bias-temperature instability problem in advanced gate stacks

Negative Bias Temperature Instability (NBTI) on thin and thick PMOSFET with SiON oxide was examined by stressing the devices under different conditions to observe the recovery behavior of NBTI. In this project, experiments were carried out to study the frequency dependent, temperature dependent and...

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Bibliographic Details
Main Author: Khin Kyu Kyu Htwe.
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/53359
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Institution: Nanyang Technological University
Language: English