Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

• Main Authors: Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: NBTI; p-MOSFETs; Plasma nitrided oxide; Thermal nitrided oxide
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84243
• Institution: National University of Singapore

10.1109/IRPS.2009.5173390