Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques

by Liu, Z.Y., Huang, D., Liu, W.J., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Published 2014

Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

by Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Published 2014

On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

by Liu, W.J., Liu, Z.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Shen, C., Li, M.-F.
Published 2014

Characteristics of NBTI in pMOSFETs with thermally and plasma nitrided gate oxides

by Liu, W.J., Liu, Z.Y., Luo, Y., Jiao, G.F., Huang, X.Y., Huang, D., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Published 2014