Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods

10.1109/IRPS.2009.5173390

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Bibliographic Details
Main Authors: Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
NBTI
p-MOSFETs
Plasma nitrided oxide
Thermal nitrided oxide
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84243
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Institution: National University of Singapore
id sg-nus-scholar.10635-84243
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spelling sg-nus-scholar.10635-842432024-11-10T17:47:18Z Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods Liu, W.J. Huang, D. Sun, Q.Q. Liao, C.C. Zhang, L.F. Gan, Z.H. Wong, W. Li, M.-F. ELECTRICAL & COMPUTER ENGINEERING NBTI p-MOSFETs Plasma nitrided oxide Thermal nitrided oxide 10.1109/IRPS.2009.5173390 IEEE International Reliability Physics Symposium Proceedings 964-968 2014-10-07T04:50:26Z 2014-10-07T04:50:26Z 2009 Conference Paper Liu, W.J., Huang, D., Sun, Q.Q., Liao, C.C., Zhang, L.F., Gan, Z.H., Wong, W., Li, M.-F. (2009). Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods. IEEE International Reliability Physics Symposium Proceedings : 964-968. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2009.5173390 0780388038 15417026 http://scholarbank.nus.edu.sg/handle/10635/84243 000272068100170 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic NBTI
p-MOSFETs
Plasma nitrided oxide
Thermal nitrided oxide
spellingShingle NBTI
p-MOSFETs
Plasma nitrided oxide
Thermal nitrided oxide
Liu, W.J.
Huang, D.
Sun, Q.Q.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F.
Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
description 10.1109/IRPS.2009.5173390
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Liu, W.J.
Huang, D.
Sun, Q.Q.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F.
format Conference or Workshop Item
author Liu, W.J.
Huang, D.
Sun, Q.Q.
Liao, C.C.
Zhang, L.F.
Gan, Z.H.
Wong, W.
Li, M.-F.
author_sort Liu, W.J.
title Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_short Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_full Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_fullStr Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_full_unstemmed Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methods
title_sort studies of nbti in pmosfets with thermal and plasma nitrided sion gate oxides by ofit and fpm methods
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84243
_version_ 1821191647904399360

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