New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing

New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing

New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activat...

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Main Authors: Boo, Ann Ann, Tung, Zhi Yan, Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Bias-temperature Instability
High-k Gate Dielectric
Online Access:https://hdl.handle.net/10356/86847
http://hdl.handle.net/10220/45200
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-868472020-03-07T13:57:30Z New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing Boo, Ann Ann Tung, Zhi Yan Ang, Diing Shenp School of Electrical and Electronic Engineering Bias-temperature Instability High-k Gate Dielectric New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activation energies, and power-law time exponents. In addition, a corner temperature (~125 °C), which marks an increase in the activation energy from the high-to-low temperature regime, is revealed in both the trapped-hole transformation and the SILC generation, further highlighting the strongly correlated behaviors of the two effects. These findings corroborate an earlier hypothesis that both phenomena share a common degradation mechanism. MOE (Min. of Education, S’pore) Accepted version 2018-07-24T03:00:12Z 2019-12-06T16:30:07Z 2018-07-24T03:00:12Z 2019-12-06T16:30:07Z 2016 Journal Article Boo, A. A., Tung, Z. Y., & Ang, D. S. (2016). New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing. IEEE Electron Device Letters, 37(4), 369-372. 0741-3106 https://hdl.handle.net/10356/86847 http://hdl.handle.net/10220/45200 10.1109/LED.2016.2531752 en IEEE Electron Device Letters © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2016.2531752]. 4 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Bias-temperature Instability
High-k Gate Dielectric
spellingShingle Bias-temperature Instability
High-k Gate Dielectric
Boo, Ann Ann
Tung, Zhi Yan
Ang, Diing Shenp
New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
description New observations on the correlation between the recoverable-to-permanent transformation of hole trapping and the generation of stress-induced leakage current (SILC) under negative-bias temperature stressing are presented. Both effects are shown to exhibit very similar temperature dependence, activation energies, and power-law time exponents. In addition, a corner temperature (~125 °C), which marks an increase in the activation energy from the high-to-low temperature regime, is revealed in both the trapped-hole transformation and the SILC generation, further highlighting the strongly correlated behaviors of the two effects. These findings corroborate an earlier hypothesis that both phenomena share a common degradation mechanism.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Boo, Ann Ann
Tung, Zhi Yan
Ang, Diing Shenp
format Article
author Boo, Ann Ann
Tung, Zhi Yan
Ang, Diing Shenp
author_sort Boo, Ann Ann
title New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
title_short New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
title_full New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
title_fullStr New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
title_full_unstemmed New observations on the correlation between hole-trapping transformation and SILC generation under NBTI stressing
title_sort new observations on the correlation between hole-trapping transformation and silc generation under nbti stressing
publishDate 2018
url https://hdl.handle.net/10356/86847
http://hdl.handle.net/10220/45200
_version_ 1681046037715746816

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