Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs
10.1109/TED.2010.2046992
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sg-nus-scholar.10635-822172023-10-30T23:02:38Z Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs Xie, R. Phung, T.H. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING Bias temperature instability (BTI) Fluorine (F) Germanium (Ge) HfO2 High-k gate dielectrics Interface traps Metal-oxide-semiconductor (MOS) devices MOS fieldeffect transistor (MOSFET) Passivation Silicon nitride (SN) 10.1109/TED.2010.2046992 IEEE Transactions on Electron Devices 57 6 1399-1407 IETDA 2014-10-07T04:26:46Z 2014-10-07T04:26:46Z 2010-06 Article Xie, R., Phung, T.H., Yu, M., Zhu, C. (2010-06). Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs. IEEE Transactions on Electron Devices 57 (6) : 1399-1407. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2046992 00189383 http://scholarbank.nus.edu.sg/handle/10635/82217 000277884100027 Scopus |
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| topic |
Bias temperature instability (BTI) Fluorine (F) Germanium (Ge) HfO2 High-k gate dielectrics Interface traps Metal-oxide-semiconductor (MOS) devices MOS fieldeffect transistor (MOSFET) Passivation Silicon nitride (SN) |
| spellingShingle |
Bias temperature instability (BTI) Fluorine (F) Germanium (Ge) HfO2 High-k gate dielectrics Interface traps Metal-oxide-semiconductor (MOS) devices MOS fieldeffect transistor (MOSFET) Passivation Silicon nitride (SN) Xie, R. Phung, T.H. Yu, M. Zhu, C. Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| description |
10.1109/TED.2010.2046992 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Xie, R. Phung, T.H. Yu, M. Zhu, C. |
| format |
Article |
| author |
Xie, R. Phung, T.H. Yu, M. Zhu, C. |
| author_sort |
Xie, R. |
| title |
Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| title_short |
Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| title_full |
Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| title_fullStr |
Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| title_full_unstemmed |
Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs |
| title_sort |
effective surface passivation by novel sih4-nh3 treatment and bti characteristics on interface-engineered high-mobility hfo 2-gated ge pmosfets |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82217 |
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1781784083359072256 |