Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs

Effective surface passivation by novel SiH4-NH3 treatment and BTI characteristics on interface-engineered high-mobility HfO 2-gated Ge pMOSFETs

10.1109/TED.2010.2046992

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Bibliographic Details
Main Authors: Xie, R., Phung, T.H., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Bias temperature instability (BTI)
Fluorine (F)
Germanium (Ge)
HfO2
High-k gate dielectrics
Interface traps
Metal-oxide-semiconductor (MOS) devices
MOS fieldeffect transistor (MOSFET)
Passivation
Silicon nitride (SN)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82217
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2010.2046992

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