Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational study

Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational study

10.1109/IWCE.2009.5091104

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Bibliographic Details
Main Authors: Leong, Z.-Y., Lam, K.-T., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Edge roughness
FET
Graphene
Nanoribbon
NEGF
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83630
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83630

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