Device physics and characteristics of graphene nanoribbon tunneling FETs

Device physics and characteristics of graphene nanoribbon tunneling FETs

10.1109/TED.2010.2065809

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Bibliographic Details
Main Authors: Chin, S.-K., Seah, D., Lam, K.-T., Samudra, G.S., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dirac equation
graphene nanoribbons (GNR)
nonequilibrium Green's function (NEGF)
tunneling FET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82148
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82148

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