Device physics and characteristics of graphene nanoribbon tunneling FETs

Device physics and characteristics of graphene nanoribbon tunneling FETs

10.1109/TED.2010.2065809

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書目詳細資料
Main Authors:	Chin, S.-K., Seah, D., Lam, K.-T., Samudra, G.S., Liang, G.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Dirac equation graphene nanoribbons (GNR) nonequilibrium Green's function (NEGF) tunneling FET
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/82148
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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