Device physics and characteristics of graphene nanoribbon tunneling FETs

10.1109/TED.2010.2065809

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Bibliographic Details
Main Authors:	Chin, S.-K., Seah, D., Lam, K.-T., Samudra, G.S., Liang, G.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Dirac equation graphene nanoribbons (GNR) nonequilibrium Green's function (NEGF) tunneling FET
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82148
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Institution:	National University of Singapore

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