A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs

• Main Authors: Ding, Y., Cheng, R., Koh, S.-M., Liu, B., Gyanathan, A., Zhou, Q., Tong, Y., Lim, P.S.-Y., Han, G., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/83381
• 機構: National University of Singapore

10.1109/IEDM.2011.6131678