Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

10.1109/IEDM.2013.6724699

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Main Authors:	Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., Dong, Y., Tong, Y., Bourdelle, K., Daval, N., Delprat, D., Nguyen, B.-Y., Augendre, E., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83499
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83499
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spelling	sg-nus-scholar.10635-834992015-01-06T09:43:27Z Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5) Cheng, R. Liu, B. Guo, P. Yang, Y. Zhou, Q. Gong, X. Dong, Y. Tong, Y. Bourdelle, K. Daval, N. Delprat, D. Nguyen, B.-Y. Augendre, E. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2013.6724699 Technical Digest - International Electron Devices Meeting, IEDM 26.6.1-26.6.4 TDIMD 2014-10-07T04:41:55Z 2014-10-07T04:41:55Z 2013 Conference Paper Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2013.6724699" target="_blank">https://doi.org/10.1109/IEDM.2013.6724699</a> 9781479923076 01631918 http://scholarbank.nus.edu.sg/handle/10635/83499 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2013.6724699
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Cheng, R. Liu, B. Guo, P. Yang, Y. Zhou, Q. Gong, X. Dong, Y. Tong, Y. Bourdelle, K. Daval, N. Delprat, D. Nguyen, B.-Y. Augendre, E. Yeo, Y.-C.
format	Conference or Workshop Item
author	Cheng, R. Liu, B. Guo, P. Yang, Y. Zhou, Q. Gong, X. Dong, Y. Tong, Y. Bourdelle, K. Daval, N. Delprat, D. Nguyen, B.-Y. Augendre, E. Yeo, Y.-C.
spellingShingle	Cheng, R. Liu, B. Guo, P. Yang, Y. Zhou, Q. Gong, X. Dong, Y. Tong, Y. Bourdelle, K. Daval, N. Delprat, D. Nguyen, B.-Y. Augendre, E. Yeo, Y.-C. Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
author_sort	Cheng, R.
title	Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
title_short	Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
title_full	Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
title_fullStr	Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
title_full_unstemmed	Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
title_sort	asymetrically strained high performance germanium gate-all-around nanowire p-fets featuring 3.5 nm wire width and contractible phase change liner stressor (ge2sb2te5)
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83499
_version_	1681089447199768576

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

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