APA引文

Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., . . . ENGINEERING, E. &. C. (2014). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5).

Chicago Style Citation

Cheng, R., et al. Asymetrically Strained High Performance Germanium Gate-all-around Nanowire P-FETs Featuring 3.5 Nm Wire Width and Contractible Phase Change Liner Stressor (Ge2Sb2Te5). 2014.

MLA引文

Cheng, R., et al. Asymetrically Strained High Performance Germanium Gate-all-around Nanowire P-FETs Featuring 3.5 Nm Wire Width and Contractible Phase Change Liner Stressor (Ge2Sb2Te5). 2014.