Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

10.1109/IEDM.2013.6724699

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書目詳細資料
Main Authors:	Cheng, R., Liu, B., Guo, P., Yang, Y., Zhou, Q., Gong, X., Dong, Y., Tong, Y., Bourdelle, K., Daval, N., Delprat, D., Nguyen, B.-Y., Augendre, E., Yeo, Y.-C.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/83499
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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