Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

10.1109/LED.2011.2161259

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Bibliographic Details
Main Authors: Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
HfOx
resistive random access memory (RRAM)
unipolar resistive switching
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82758
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82758

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