Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

10.1109/LED.2011.2161259

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Bibliographic Details
Main Authors:	Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	HfOx resistive random access memory (RRAM) unipolar resistive switching
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82758
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82758
record_format	dspace
spelling	sg-nus-scholar.10635-827582023-10-30T08:02:01Z Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics Tran, X.A. Yu, H.Y. Gao, B. Kang, J.F. Sun, X.W. Yeo, Y.-C. Nguyen, B.Y. Li, M.F. ELECTRICAL & COMPUTER ENGINEERING HfOx resistive random access memory (RRAM) unipolar resistive switching 10.1109/LED.2011.2161259 IEEE Electron Device Letters 32 9 1290-1292 EDLED 2014-10-07T04:33:09Z 2014-10-07T04:33:09Z 2011-09 Article Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F. (2011-09). Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics. IEEE Electron Device Letters 32 (9) : 1290-1292. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2161259 07413106 http://scholarbank.nus.edu.sg/handle/10635/82758 000294171600042 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfOx resistive random access memory (RRAM) unipolar resistive switching
spellingShingle	HfOx resistive random access memory (RRAM) unipolar resistive switching Tran, X.A. Yu, H.Y. Gao, B. Kang, J.F. Sun, X.W. Yeo, Y.-C. Nguyen, B.Y. Li, M.F. Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
description	10.1109/LED.2011.2161259
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tran, X.A. Yu, H.Y. Gao, B. Kang, J.F. Sun, X.W. Yeo, Y.-C. Nguyen, B.Y. Li, M.F.
format	Article
author	Tran, X.A. Yu, H.Y. Gao, B. Kang, J.F. Sun, X.W. Yeo, Y.-C. Nguyen, B.Y. Li, M.F.
author_sort	Tran, X.A.
title	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
title_short	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
title_full	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
title_fullStr	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
title_full_unstemmed	Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
title_sort	ni electrode unipolar resistive ram performance enhancement by alo y incorporation into hfox switching dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82758
_version_	1781784216228331520

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

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