Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics
10.1109/LED.2011.2161259
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Main Authors: | Tran, X.A., Yu, H.Y., Gao, B., Kang, J.F., Sun, X.W., Yeo, Y.-C., Nguyen, B.Y., Li, M.F. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82758 |
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Institution: | National University of Singapore |
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