Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

10.1103/PhysRevX.3.041027

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Bibliographic Details
Main Authors: Wu, S, Luo, X, Turner, S, Peng, H, Lin, W, Ding, J, David, A, Wang, B, Van Tendeloo, G, Wang, J, Wu, T
Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
Format: Article
Published: 2020
Subjects:
Bottom electrodes
Charged oxygen vacancies
Conducting layers
High-resistance state
Non-volatile memory application
Ohmic characteristics
Resistive switching
Reversible transitions
Defects
Interface states
Lanthanum alloys
Strontium titanates
Switching systems
Heterojunctions
Online Access:https://scholarbank.nus.edu.sg/handle/10635/183667
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/183667

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