Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

• Main Authors: Wu, S, Luo, X, Turner, S, Peng, H, Lin, W, Ding, J, David, A, Wang, B, Van Tendeloo, G, Wang, J, Wu, T
• Other Authors: CENTRE FOR ADVANCED 2D MATERIALS
• Format: Article
• Published: 2020
• Subjects: Bottom electrodes; Charged oxygen vacancies; Conducting layers; High-resistance state; Non-volatile memory application; Ohmic characteristics; Resistive switching; Reversible transitions; Defects; Interface states; Lanthanum alloys; Strontium titanates; Switching systems; Heterojunctions
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/183667
• Institution: National University of Singapore

10.1103/PhysRevX.3.041027