Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

10.1103/PhysRevX.3.041027

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Bibliographic Details
Main Authors:	Wu, S, Luo, X, Turner, S, Peng, H, Lin, W, Ding, J, David, A, Wang, B, Van Tendeloo, G, Wang, J, Wu, T
Other Authors:	CENTRE FOR ADVANCED 2D MATERIALS
Format:	Article
Published:	2020
Subjects:	Bottom electrodes Charged oxygen vacancies Conducting layers High-resistance state Non-volatile memory application Ohmic characteristics Resistive switching Reversible transitions Defects Interface states Lanthanum alloys Strontium titanates Switching systems Heterojunctions
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/183667
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-183667
record_format	dspace
spelling	sg-nus-scholar.10635-1836672024-04-25T01:02:42Z Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures Wu, S Luo, X Turner, S Peng, H Lin, W Ding, J David, A Wang, B Van Tendeloo, G Wang, J Wu, T CENTRE FOR ADVANCED 2D MATERIALS MATERIALS SCIENCE AND ENGINEERING Bottom electrodes Charged oxygen vacancies Conducting layers High-resistance state Non-volatile memory application Ohmic characteristics Resistive switching Reversible transitions Defects Interface states Lanthanum alloys Strontium titanates Switching systems Heterojunctions 10.1103/PhysRevX.3.041027 Physical Review X 3 4 e041027 2020-11-18T07:37:38Z 2020-11-18T07:37:38Z 2014 Article Wu, S, Luo, X, Turner, S, Peng, H, Lin, W, Ding, J, David, A, Wang, B, Van Tendeloo, G, Wang, J, Wu, T (2014). Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures. Physical Review X 3 (4) : e041027. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevX.3.041027 21603308 https://scholarbank.nus.edu.sg/handle/10635/183667 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Bottom electrodes Charged oxygen vacancies Conducting layers High-resistance state Non-volatile memory application Ohmic characteristics Resistive switching Reversible transitions Defects Interface states Lanthanum alloys Strontium titanates Switching systems Heterojunctions
spellingShingle	Bottom electrodes Charged oxygen vacancies Conducting layers High-resistance state Non-volatile memory application Ohmic characteristics Resistive switching Reversible transitions Defects Interface states Lanthanum alloys Strontium titanates Switching systems Heterojunctions Wu, S Luo, X Turner, S Peng, H Lin, W Ding, J David, A Wang, B Van Tendeloo, G Wang, J Wu, T Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
description	10.1103/PhysRevX.3.041027
author2	CENTRE FOR ADVANCED 2D MATERIALS
author_facet	CENTRE FOR ADVANCED 2D MATERIALS Wu, S Luo, X Turner, S Peng, H Lin, W Ding, J David, A Wang, B Van Tendeloo, G Wang, J Wu, T
format	Article
author	Wu, S Luo, X Turner, S Peng, H Lin, W Ding, J David, A Wang, B Van Tendeloo, G Wang, J Wu, T
author_sort	Wu, S
title	Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
title_short	Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
title_full	Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
title_fullStr	Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
title_full_unstemmed	Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
title_sort	nonvolatile resistive switching in pt/laalo3/srtio3 heterostructures
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/183667
_version_	1800914717687939072

Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

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