The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction

The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction

We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...

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Bibliographic Details
Main Authors: Zheng, K., Sun, Xiao Wei, Teo, K. L.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
Subjects:
Heterojunction
Interface
Filament
Resistive switching
Intrinsic defects
Online Access:https://hdl.handle.net/10356/81343
http://hdl.handle.net/10220/39214
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/81343
http://hdl.handle.net/10220/39214

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