The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction

• Main Authors: Zheng, K., Sun, Xiao Wei, Teo, K. L.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: Heterojunction; Interface; Filament; Resistive switching; Intrinsic defects
• Online Access: https://hdl.handle.net/10356/81343; http://hdl.handle.net/10220/39214
• Institution: Nanyang Technological University

We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...