Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

10.1002/advs.201800096

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Bibliographic Details
Main Authors:	Wu, X, Yu, K, Cha, D, Bosman, M, Raghavan, N, Zhang, X, Li, K, Liu, Q, Sun, L, Pey, K
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2020
Subjects:	Electrodes Hafnium oxides High resolution transmission electron microscopy In situ processing Oxygen vacancies Silicon Transmission electron microscopy Computational performance Hafnium dioxide In-situ transmission electron microscopies Interfacial defect Resistive switching Resistive switching devices Resistive switching memory Spatial and temporal correlation Switching
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182079
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Institution:	National University of Singapore

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