Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

10.1002/advs.201800096

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Bibliographic Details
Main Authors:	Wu, X, Yu, K, Cha, D, Bosman, M, Raghavan, N, Zhang, X, Li, K, Liu, Q, Sun, L, Pey, K
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2020
Subjects:	Electrodes Hafnium oxides High resolution transmission electron microscopy In situ processing Oxygen vacancies Silicon Transmission electron microscopy Computational performance Hafnium dioxide In-situ transmission electron microscopies Interfacial defect Resistive switching Resistive switching devices Resistive switching memory Spatial and temporal correlation Switching
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/182079
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-182079
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spelling	sg-nus-scholar.10635-1820792024-11-09T18:28:02Z Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects Wu, X Yu, K Cha, D Bosman, M Raghavan, N Zhang, X Li, K Liu, Q Sun, L Pey, K MATERIALS SCIENCE AND ENGINEERING Electrodes Hafnium oxides High resolution transmission electron microscopy In situ processing Oxygen vacancies Silicon Transmission electron microscopy Computational performance Hafnium dioxide In-situ transmission electron microscopies Interfacial defect Resistive switching Resistive switching devices Resistive switching memory Spatial and temporal correlation Switching 10.1002/advs.201800096 Advanced Science 5 6 1800096 2020-10-30T02:07:17Z 2020-10-30T02:07:17Z 2018 Article Wu, X, Yu, K, Cha, D, Bosman, M, Raghavan, N, Zhang, X, Li, K, Liu, Q, Sun, L, Pey, K (2018). Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects. Advanced Science 5 (6) : 1800096. ScholarBank@NUS Repository. https://doi.org/10.1002/advs.201800096 21983844 https://scholarbank.nus.edu.sg/handle/10635/182079 Attribution 4.0 International http://creativecommons.org/licenses/by/4.0/ Unpaywall 20201031
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electrodes Hafnium oxides High resolution transmission electron microscopy In situ processing Oxygen vacancies Silicon Transmission electron microscopy Computational performance Hafnium dioxide In-situ transmission electron microscopies Interfacial defect Resistive switching Resistive switching devices Resistive switching memory Spatial and temporal correlation Switching
spellingShingle	Electrodes Hafnium oxides High resolution transmission electron microscopy In situ processing Oxygen vacancies Silicon Transmission electron microscopy Computational performance Hafnium dioxide In-situ transmission electron microscopies Interfacial defect Resistive switching Resistive switching devices Resistive switching memory Spatial and temporal correlation Switching Wu, X Yu, K Cha, D Bosman, M Raghavan, N Zhang, X Li, K Liu, Q Sun, L Pey, K Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
description	10.1002/advs.201800096
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Wu, X Yu, K Cha, D Bosman, M Raghavan, N Zhang, X Li, K Liu, Q Sun, L Pey, K
format	Article
author	Wu, X Yu, K Cha, D Bosman, M Raghavan, N Zhang, X Li, K Liu, Q Sun, L Pey, K
author_sort	Wu, X
title	Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
title_short	Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
title_full	Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
title_fullStr	Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
title_full_unstemmed	Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects
title_sort	atomic scale modulation of self-rectifying resistive switching by interfacial defects
publishDate	2020
url	https://scholarbank.nus.edu.sg/handle/10635/182079
_version_	1821220025355206656

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

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