Resistive switching in p-type nickel oxide/n-type indium gallium zinc oxide thin film heterojunction structure

• Main Authors: Li, Huakai, Chen, Tupei, Hu, Shaogang, Lee, W. L., Liu, Yonghong, Zhang, Qing, Lee, Pooi See, Wang, Xinpeng, Li, Haiyang, Lo, Guoqiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Heterojunction; Multibit Storage
• Online Access: https://hdl.handle.net/10356/86846; http://hdl.handle.net/10220/45207
• Institution: Nanyang Technological University

We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a...