Resistive switching in p-type nickel oxide/n-type indium gallium zinc oxide thin film heterojunction structure

• Main Authors: Li, Huakai, Chen, Tupei, Hu, Shaogang, Lee, W. L., Liu, Yonghong, Zhang, Qing, Lee, Pooi See, Wang, Xinpeng, Li, Haiyang, Lo, Guoqiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Heterojunction; Multibit Storage
• Online Access: https://hdl.handle.net/10356/86846; http://hdl.handle.net/10220/45207
• Institution: Nanyang Technological University

We report a p-type nickel oxide/n-type indium gallium zinc oxide (p-NiO/n-IGZO) thin film heterojunction structure for resistive switching memory application. The as-fabricated structure exhibits the normal p-n junction behaviors with good rectification characteristic. The structure is turned into a bipolar resistive switching memory by a forming process in which the p-n junction is reversely biased. The device shows good memory performances; and it has the capability of multibit storage, which can be realized by controlling the compliance current or reset stop voltage during the switching operation. The mechanisms for both the forming process and bipolar resistive switching are discussed; and the current conduction at the low- and high-resistance states are examined in terms of temperature dependence of the current-voltage characteristic of the structure.