The Effect of Intrinsic Defects on Resistive Switching Based on p–n Heterojunction
We report a unidirectional bipolar resistive switching in an n-type GaO x /p-type NiO x heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacan...
Saved in:
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/81343 http://hdl.handle.net/10220/39214 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |