Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors

Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors

10.3390/mi10060369

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Bibliographic Details
Main Authors: Lian, X., Shen, X., Lu, L., He, N., Wan, X., Samanta, S., Tong, Y.
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: MDPI AG 2021
Subjects:
Conductive filament
Quantum point contact
Resistance switching mechanism
Silicon oxide-based memristors
Variability
Weibull distribution
Online Access:https://scholarbank.nus.edu.sg/handle/10635/212300
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/212300

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