Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors

10.3390/mi10060369

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Bibliographic Details
Main Authors:	Lian, X., Shen, X., Lu, L., He, N., Wan, X., Samanta, S., Tong, Y.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	MDPI AG 2021
Subjects:	Conductive filament Quantum point contact Resistance switching mechanism Silicon oxide-based memristors Variability Weibull distribution
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/212300
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-212300
record_format	dspace
spelling	sg-nus-scholar.10635-2123002024-04-16T10:48:27Z Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors Lian, X. Shen, X. Lu, L. He, N. Wan, X. Samanta, S. Tong, Y. ELECTRICAL AND COMPUTER ENGINEERING Conductive filament Quantum point contact Resistance switching mechanism Silicon oxide-based memristors Variability Weibull distribution 10.3390/mi10060369 Micromachines 10 6 369 2021-12-29T04:35:14Z 2021-12-29T04:35:14Z 2019 Article Lian, X., Shen, X., Lu, L., He, N., Wan, X., Samanta, S., Tong, Y. (2019). Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors. Micromachines 10 (6) : 369. ScholarBank@NUS Repository. https://doi.org/10.3390/mi10060369 2072666X https://scholarbank.nus.edu.sg/handle/10635/212300 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ MDPI AG Scopus OA2019
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Conductive filament Quantum point contact Resistance switching mechanism Silicon oxide-based memristors Variability Weibull distribution
spellingShingle	Conductive filament Quantum point contact Resistance switching mechanism Silicon oxide-based memristors Variability Weibull distribution Lian, X. Shen, X. Lu, L. He, N. Wan, X. Samanta, S. Tong, Y. Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
description	10.3390/mi10060369
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Lian, X. Shen, X. Lu, L. He, N. Wan, X. Samanta, S. Tong, Y.
format	Article
author	Lian, X. Shen, X. Lu, L. He, N. Wan, X. Samanta, S. Tong, Y.
author_sort	Lian, X.
title	Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
title_short	Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
title_full	Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
title_fullStr	Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
title_full_unstemmed	Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
title_sort	resistance switching statistics and mechanisms of pt dispersed silicon oxide-based memristors
publisher	MDPI AG
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/212300
_version_	1800915266956165120

Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors

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