Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements

Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements

10.1002/mmce.10001

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Bibliographic Details
Main Authors: Ooi, B.L., Zhou, T.S., Kooi, P.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Aluminum gallium arsenic/gallium arsenic
Heterojunction bipolar transistor
Small-signal model
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55797
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/55797

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