Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications

Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications

In this work, the resistive switching characteristics of MgO/Al2O3-based resistive random-access memory (ReRAM) devices have been reported. Analysis shows the change in dominant conduction mechanism from space-charge-limited conduction to Schottky emission owing to the incorporation of an Al2O3 inse...

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Bibliographic Details
Main Authors: Chow, Samuel Chen Wai, Dananjaya, Putu Andhita, Ang, Jia Min, Loy, Desmond Jia Jun, Thong, Jia Rui, Hoo, Siew Wei, Toh, Eng Huat, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Materials
Filament Evolution
Interface Engineering
Online Access:https://hdl.handle.net/10356/170348
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/170348

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