Impact of interfacial engineering on MgO-based resistive switching devices for low-power applications
In this work, the resistive switching characteristics of MgO/Al2O3-based resistive random-access memory (ReRAM) devices have been reported. Analysis shows the change in dominant conduction mechanism from space-charge-limited conduction to Schottky emission owing to the incorporation of an Al2O3 inse...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/170348 |
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| Institution: | Nanyang Technological University |
| Language: | English |