Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment

Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment

A gradual electroforming process was implemented on the pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >107 and ultralow O...

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Bibliographic Details
Main Authors: Dananjaya, Putu Andhita, Loy, Desmond Jia Jun, Chow, Samuel Chen Wai, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2020
Subjects:
Science::Physics
Threshold Switching
Diffusive Memristor
Online Access:https://hdl.handle.net/10356/140103
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/140103

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