Unidirectional threshold switching induced by Cu migration with high selectivity and ultralow OFF current under gradual electroforming treatment
A gradual electroforming process was implemented on the pristine Pt/HfOx/Cu/Pt structure to realize volatile threshold switching characteristics of a diffusive memristor. The reported devices exhibit stable unidirectional threshold switching properties with high selectivity of >107 and ultralow O...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/140103 |
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| Institution: | Nanyang Technological University |
| Language: | English |