Ag/Ti/GeS/Ag bidirectional conductive-bridge selector with low turn-off latency, high endurance, and enhanced switching uniformity
To fulfill the demands of three-dimensional (3D) cross-point array architectures in embedded memories, selectors with low voltage and low off current with high selectivity are imperative. Selector devices with reliable pulsed switching performance at a logic-compatible voltage are crucial for achiev...
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Main Authors: | , , , , |
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格式: | Article |
語言: | English |
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2025
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在線閱讀: | https://hdl.handle.net/10356/182203 |
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機構: | Nanyang Technological University |
語言: | English |